Title :
A simplified switch-based GaN HEMT model for RF switch-mode amplifiers
Author :
Wentzel, A. ; Schnieder, F. ; Meliani, C. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik (FBH), Berlin, Germany
Abstract :
A simplified switch-based model is proposed for GaN-HEMTs, which is suitable for the design of switch-mode-type amplifiers, in both time and frequency domain. The model is validated using a current-mode class-S circuit, for signals up to 5 Gbps. This amplifier structure allows to check two important characteristics of this model: its capabilities to operate as a switch between two digital states and the broadband capabilities. Though much simpler than the conventional nonlinear HEMT models the simplified model shows very good agreement with measurements and excellent stability in time-domain simulations.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium compounds; integrated circuit modelling; microwave switches; wide band gap semiconductors; GaN; RF switch-mode amplifiers; broadband capabilities; current-mode class-S circuit; digital states; simplified switch-based GaN HEMT model; time-domain simulations; Broadband amplifiers; Circuits; Frequency domain analysis; Gallium nitride; HEMTs; Radio frequency; Radiofrequency amplifiers; Stability; Switches; Time domain analysis; GaN HEMT; PA; nonlinear model; switch-mode amplifiers; time domain measurements;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
