Title :
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
Author :
Angelov, I. ; Desmaris, V. ; Dynefors, K. ; Nilsson, P. Å ; Rorsman, N. ; Zirath, H.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and large signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; MESFET; SiC; large-signal modelling; Aluminum gallium nitride; Decision support systems; FETs; Frequency; Gallium nitride; HEMTs; MESFETs; MODFETs; Silicon carbide; Wideband;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
