DocumentCode
2024007
Title
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
Author
Angelov, I. ; Desmaris, V. ; Dynefors, K. ; Nilsson, P. Å ; Rorsman, N. ; Zirath, H.
Author_Institution
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
309
Lastpage
312
Abstract
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and large signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; MESFET; SiC; large-signal modelling; Aluminum gallium nitride; Decision support systems; FETs; Frequency; Gallium nitride; HEMTs; MESFETs; MODFETs; Silicon carbide; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637212
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