DocumentCode
2024088
Title
Suitability of integrated protection diodes from diverse semiconductor technologies
Author
Van Wanum, Maurice ; Lebouille, Tom ; Visser, Guido ; Van Vliet, Frank E.
Author_Institution
TNO Defence, Security & Safety, The Hague, Netherlands
fYear
2009
fDate
28-29 Sept. 2009
Firstpage
294
Lastpage
297
Abstract
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.
Keywords
gallium arsenide; gallium compounds; microwave receivers; semiconductor diodes; silicon; GaAs; GaN; Si; diverse semiconductor technology; integrated protection diodes; receiver protection; semiconductor materials; Electrical resistance measurement; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Integrated circuit technology; Microwave technology; Phased arrays; Protection; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4749-7
Type
conf
Filename
5296405
Link To Document