DocumentCode
2024188
Title
A monolithic integrated 180 GHz SiGe HBT push-push oscillator
Author
Roux, P. ; Baeyens, Y. ; Wohlgemuth, O. ; Chen, Y.K.
Author_Institution
Lucent Technol. - Bell Lab., France
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
341
Lastpage
343
Abstract
A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process. Up to -5 dBm output power is achieved at 180 GHz using a technology with a transition frequency f/sub T/ of 200 GHz and maximum oscillation frequency f/sub MAX/ of 275 GHz. Preliminary phase noise measurements show a phase noise of less than -90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit noise; millimetre wave oscillators; monolithic integrated circuits; phase noise; semiconductor materials; 1 MHz; 180 GHz; 200 GHz; 275 GHz; SiGe; maximum oscillation frequency; monolithic integrated HBT push-push oscillator; phase noise measurements; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Optical resonators; Phase noise; Power generation; Power system harmonics; Silicon germanium; Topology; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637221
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