Title :
A monolithic integrated 180 GHz SiGe HBT push-push oscillator
Author :
Roux, P. ; Baeyens, Y. ; Wohlgemuth, O. ; Chen, Y.K.
Author_Institution :
Lucent Technol. - Bell Lab., France
Abstract :
A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process. Up to -5 dBm output power is achieved at 180 GHz using a technology with a transition frequency f/sub T/ of 200 GHz and maximum oscillation frequency f/sub MAX/ of 275 GHz. Preliminary phase noise measurements show a phase noise of less than -90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit noise; millimetre wave oscillators; monolithic integrated circuits; phase noise; semiconductor materials; 1 MHz; 180 GHz; 200 GHz; 275 GHz; SiGe; maximum oscillation frequency; monolithic integrated HBT push-push oscillator; phase noise measurements; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Optical resonators; Phase noise; Power generation; Power system harmonics; Silicon germanium; Topology; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
