A GaAs distributed amplifier with an output voltage of 8.5 V/sub PP/ for 40 Gb/s modulators

Author

Häfele, M. ; Trasser, A. ; Beilenhoff, K. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

345

Lastpage

348

Abstract

In this paper, we report on a distributed amplifier (DA) with positive gain slope and 8.5 V/sub PP/ output voltage swing at 20 GHz. This makes the amplifier suitable for driving LiNbO/sub 3/ modulators. The amplifier consists of six cascode cells and is fabricated in a commercially available 150 nm GaAs power pHEMT technology. Gain equals to 9.8 dB at low frequencies and rises up to 12.8 dB at 38 GHz. This amplifier is then cascaded with a preamplifier. Losses at high frequencies due to cascading are compensated by the positive gain slope of the amplifier described here. The cascaded amplifiers exhibit a gain of 19.5 dB and a bandwidth of 38 GHz with a flat frequency response of /spl plusmn/0.6 dB up to 28 GHz.

Keywords

III-V semiconductors; distributed amplifiers; frequency response; gallium arsenide; modulators; power HEMT; preamplifiers; 19.5 dB; 20 GHz; 37 GHz; 38 GHz; 40 Gbit/s; 8.5 V; 9.8 dB; GaAs; cascaded amplifiers; cascode cells; distributed amplifier; flat frequency response; modulators; positive gain slope; power pHEMT technology; Bandwidth; Chirp modulation; Distributed amplifiers; Frequency response; Gallium arsenide; Indium phosphide; PHEMTs; Power amplifiers; Voltage; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637223