Determination of channel temperature of AlGaN/GaN HEMT by electrical method

Author

Shiwei Feng ; Peifeng Hu ; Guangchen Zhang ; Chunsheng Guo ; Xuesong Xie ; Tangsheng Chen

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

21-25 Feb. 2010

Firstpage

165

Lastpage

169

Abstract

In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast switch circuit technique. The regress of tested data was used to reduce the scatter error too. The thermal resistance constitution was extracted from the transient heating response curves.

Keywords

III-V semiconductors; Schottky barriers; Wiener filters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; temperature measurement; thermal analysis; thermal resistance; wide band gap semiconductors; AlGaN-GaN; HEMT; channel temperature; electrical method; fast switch circuit technique; forward Schottky junction voltage; scatter error; temperature sensitive parameter; thermal resistance; transient heating; Aluminum gallium nitride; Circuit testing; Gallium nitride; HEMTs; Scattering; Switches; Switching circuits; Temperature sensors; Thermal resistance; Voltage; HEMT; channel temperature; electrical method; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE

Conference_Location

Santa Clara, CA

ISSN

1065-2221

Print_ISBN

978-1-4244-9458-3

Electronic_ISBN

1065-2221

Type

conf

DOI

10.1109/STHERM.2010.5444296

Filename

5444296