DocumentCode
2024276
Title
The junction-to-case thermal resistance: A boundary condition dependent thermal metric
Author
Schweitzer, D.
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2010
fDate
21-25 Feb. 2010
Firstpage
151
Lastpage
156
Abstract
Contrary to popular belief the junction-to-case thermal resistance (Rth-JC) of a power semiconductor is not an intrinsic property of the device but depends to some extend on the cooling condition at the case surface intended for heat sinking. In addition to this the Rth-JC can be measured only with quite limited accuracy by the methods existing today. This paper investigates the dependence of the Rth-JC of power packages on different cooling conditions and tries to give an assessment of the accuracy of two measurement methods: the traditional method using a thermocouple to measure the case temperature versus the recently proposed transient dual interface method. Consequences and limits for the use of the junction-to-case thermal resistance in engineering applications as well as for standardization issues are discussed.
Keywords
power semiconductor devices; thermal resistance; thermocouples; boundary condition dependent thermal metric; junction-to-case thermal resistance; power semiconductor; thermocouple; Boundary conditions; Cooling; Electrical resistance measurement; Heat sinks; Packaging; Power measurement; Surface resistance; Temperature dependence; Temperature measurement; Thermal resistance; Junction-to-case thermal resistance; power semiconductor devices; structure function; thermocouple measurement; transient dual interface measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
Conference_Location
Santa Clara, CA
ISSN
1065-2221
Print_ISBN
978-1-4244-9458-3
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2010.5444298
Filename
5444298
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