Application of Si/SiGe HBTs in active integrated antennas

Author

Kaleja, M.M. ; Grubl, A. ; Sinnesbichler, F.X. ; Olbrich, G.R. ; Strohm, K.M. ; Luy, J.-F. ; Biebl, E.M.

Author_Institution

Tech. Univ. Munchen, Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

64

Lastpage

66

Abstract

The application of Si-SiGe HBTs in active integrated K-band antennas on high resistivity silicon substrates is presented. The antenna consists of microstrip structures representing the resonating and radiating circuits and a transistor mounted on the substrate using flip-chip technique. By means of large-signal modeling, several antennas were designed, built, and characterized to show the feasibility of this novel approach.

Keywords

Ge-Si alloys; active antennas; elemental semiconductors; flip-chip devices; heterojunction bipolar transistors; microstrip antennas; millimetre wave antennas; millimetre wave bipolar transistors; millimetre wave integrated circuits; semiconductor materials; silicon; K-band antennas; Si; Si-SiGe; Si/SiGe HBTs; active integrated antennas; flip-chip technique; high resistivity Si substrate; large-signal modeling; microstrip structures; radiating circuits; resonating circuits; Circuits; Conductivity; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; K-band; Microstrip antennas; Parasitic capacitance; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844299

Filename

844299