Title :
GaN-based FETs for microwave high-power applications
Author :
Shimawaki, Hidenori ; Miyamoto, Hironobu
Author_Institution :
Adv. HF Device R&D Center, NEC Corp., Shiga, Japan
Abstract :
The present status of GaN-based FETs has been described with a focus on microwave high-power performance. Our latest developments of the devices are presented, and the device and amplifier performance is reported. This includes the demonstration of a 230-W CW output power at 2 GHz, a 156-W pulsed output power at 4 GHz, and a 5.8-W CW output power at 30 GHz. The results confirmed excellent potential of the GaN-based FETs especially for high-voltage, high-power applications at microwave and millimeter-wave frequencies.
Keywords :
III-V semiconductors; gallium compounds; microwave amplifiers; microwave field effect transistors; millimetre wave amplifiers; millimetre wave field effect transistors; wide band gap semiconductors; 156 W; 2 GHz; 230 W; 30 GHz; 4 GHz; 5.8 W; AlGaN-GaN; CW output power; FET; SiC; amplifier; microwave high-power applications; millimeter-wave frequencies; Aluminum gallium nitride; Fabrication; Frequency; Gallium nitride; III-V semiconductor materials; Microwave FETs; Power amplifiers; Power generation; Substrates; Voltage;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
