DocumentCode
2024501
Title
Nonlinear model of epitaxial layer resistor on GaAs substrate
Author
Zhu, Yu ; Wei, Cejun ; Klimashov, Oleksiy ; Zhang, Cindy ; Tkachenko, Yevgeniy
Author_Institution
Skyworks Solution Inc., Woburn, MA, USA
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
385
Lastpage
388
Abstract
A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation. The resistor I-V behavior can be excellently fitted by a hyperbolic tangent expression with only two model parameters. By taking into account the nonlinearities, frequency dispersion, and parasitic effect, the proposed model accurately predicts DC, small signal S parameter, and power performances of resistors.
Keywords
III-V semiconductors; circuit simulation; gallium arsenide; resistors; semiconductor epitaxial layers; GaAs; GaAs substrate; I-V behavior; circuit simulation; epitaxial layer resistor; frequency dispersion; hyperbolic tangent expression; model parameters; nonlinear model; parasitic effect; power performances; resistor design; signal model; small signal S parameter; Circuit simulation; Dispersion; Epitaxial layers; Frequency; Gallium arsenide; Predictive models; Resistors; Semiconductor process modeling; Signal design; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637236
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