Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology

Author

Dinari, M. ; Serru, V. ; Camiade, M. ; Teyssandier, C. ; Baglieri, D. ; Durand, E. ; Mallet-Guy, B. ; Plaze, J.P.

Author_Institution

United Monolithic Semicond. SAS, Orsay, France

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

308

Lastpage

311

Abstract

In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 mum Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point higher than 16 dBm and an Input IP3 of 25 dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.

Keywords

III-V semiconductors; MMIC mixers; gallium arsenide; power HEMT; GaAs; frequency 6 GHz to 18 GHz; fully integrated MMIC; high isolation mixer MMIC; input RF compression point; monolithic microwave integrated circuit mixer; power pHEMT technology; size 0.25 mum; wide band high linearity mixer; Application specific integrated circuits; Frequency; Gallium arsenide; Integrated circuit technology; Isolation technology; Linearity; MMICs; PHEMTs; Radar applications; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296421