All-silicon nonlinear transmission line integrated into a Si/SiGe heterostructure bipolar transistor process

Author

Birk, M. ; Behammer, D. ; Schumacher, H.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

75

Lastpage

78

Abstract

Summary form only given. Nonlinear Transmission Lines (NLTL) have been fabricated so far on GaAs substrates only. Recently, we were able to demonstrate a working nonlinear transmission line for the first time on high resistivity silicon proving the applicability of the NLTL concept to silicon millimeter wave integrated circuits (SIMMWICs). We have significantly improved our previous results by integrating the NLTL into a Si/SiGe Heterostructure Bipolar Transistor (HBT) process. The falltime of 74 ps of a 4 GHz sine wave was compressed to 12 ps, 4 V amplitude at the output of the NLTL.

Keywords

Ge-Si alloys; Schottky diodes; bipolar MIMIC; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; high-frequency transmission lines; semiconductor materials; silicon; EHF; MIMIC; MM-wave integrated circuits; MMIC; SHF; Si; Si MM-wave ICs; Si NLTL; Si-SiGe; Si/SiGe HBT process; all-silicon nonlinear transmission line; heterostructure bipolar transistor process; high resistivity Si; millimeter wave integrated circuits; Bipolar transistors; Conductivity; Distributed parameter circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave integrated circuits; Millimeter wave transistors; Silicon germanium; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844302

Filename

844302