• DocumentCode
    2024589
  • Title

    Electro-thermal model extraction for MMIC power amplifiers

  • Author

    Torregrosa-Penalva, Germán ; Asensio-López, Alberto ; Blanco-Del-Campo, Álvaro

  • Author_Institution
    Universidad Miguel Hernandez, Alicante, Spain
  • fYear
    2005
  • fDate
    3-4 Oct. 2005
  • Firstpage
    397
  • Lastpage
    400
  • Abstract
    This paper presents a simple procedure to extract an electro-thermal model for MMIC power amplifiers. The model accounts for the DC and RF performance of MMIC complex structures formed by multiple transistors combined in different amplifying stages. All the steps taken to perform the thermal and electrical experimental characterization to obtain the model are explained. The extracted model was validated by comparing measured and simulated data of a commercial GaAs FET MMIC power amplifier. It was also used to predict the hot spot temperature and position over a wide range of working conditions.
  • Keywords
    MMIC power amplifiers; matrix algebra; microwave transistors; GaAs FET MMIC power amplifier; MMIC power amplifiers; complex structures; electro-thermal model extraction; hot spot temperature prediction; multiple transistors; position prediction; Data mining; Electric variables; Field effect MMICs; Gallium arsenide; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Temperature distribution; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
  • Conference_Location
    Paris
  • Print_ISBN
    88-902012-0-7
  • Type

    conf

  • Filename
    1637239