DocumentCode
2024589
Title
Electro-thermal model extraction for MMIC power amplifiers
Author
Torregrosa-Penalva, Germán ; Asensio-López, Alberto ; Blanco-Del-Campo, Álvaro
Author_Institution
Universidad Miguel Hernandez, Alicante, Spain
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
397
Lastpage
400
Abstract
This paper presents a simple procedure to extract an electro-thermal model for MMIC power amplifiers. The model accounts for the DC and RF performance of MMIC complex structures formed by multiple transistors combined in different amplifying stages. All the steps taken to perform the thermal and electrical experimental characterization to obtain the model are explained. The extracted model was validated by comparing measured and simulated data of a commercial GaAs FET MMIC power amplifier. It was also used to predict the hot spot temperature and position over a wide range of working conditions.
Keywords
MMIC power amplifiers; matrix algebra; microwave transistors; GaAs FET MMIC power amplifier; MMIC power amplifiers; complex structures; electro-thermal model extraction; hot spot temperature prediction; multiple transistors; position prediction; Data mining; Electric variables; Field effect MMICs; Gallium arsenide; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637239
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