Title :
Self-packaged millimeter-wave Si-IMPATT diodes
Author :
Luschas, M. ; Wollitzer, M. ; Luy, J.-F.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany
Abstract :
This paper presents a technology process, which integrates diode and housing in a self-packaged millimeter-wave Si-IMPATT device. The housing consists of a high resistivity Si substrate, on which the active layer is grown by MBE. The use of an electrochemical etch stop in hot, aqueous KOH is described. This is the key step to the realization of the top contact of the active layer. The device is thermocompression bonded in a single step on a diamond heat sink, unlike conventional beamlead diodes with quartz ring housing which need three bonding steps.
Keywords :
IMPATT diodes; diamond; elemental semiconductors; etching; heat sinks; lead bonding; millimetre wave diodes; molecular beam epitaxial growth; semiconductor device metallisation; semiconductor device packaging; silicon; C; MBE growth; MM-wave IMPATT diodes; Si; Si IMPATT diodes; active layer growth; diamond heat sink; electrochemical etch stop; high resistivity Si substrate; housing; millimeter-wave Si device; self-packaged diodes; thermocompression bonding; top contact; Bonding; Conductivity; Diodes; Etching; Heat sinks; Millimeter wave technology; Molecular beam epitaxial growth; Packaging; Power generation; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844307
