Analysis of generic spiral-coil RF transformers on silicon

Author

Ng, K.T. ; Rejaei, Behzad ; de Kruijff, T.R. ; Soyuer, M. ; Burghartz, J.N.

Author_Institution

Lab. of Electron. Components, Delft Univ. of Technol., Netherlands

fYear

2000

fDate

28-28 April 2000

Firstpage

103

Lastpage

107

Abstract

This work demonstrates the effect of substrate loss, efficiency, and frequency response of the three generic spiral-coil transformers: stacked, bifilar and nested. The dependence of loss on the spacing of transformer coils from the oxide-silicon interface is confirmed experimentally. The high gains and better-than-expected bandwidths of the stacked transformers as compared to those of the bifilar and nested transformers are demonstrated. The effect of bulk silicon on transformer efficiency is investigated with the use of a substrate transfer technique.

Keywords

MMIC; UHF integrated circuits; coils; equivalent circuits; frequency response; high-frequency transformers; silicon; Si; bifilar type; frequency response; generic RF transformers; nested type; oxide-silicon interface; spiral-coil RF transformers; stacked type; substrate loss; substrate transfer technique; transformer coil spacing; transformer efficiency; Bandwidth; Coils; Inductors; Laboratories; Materials science and technology; Microwave technology; Radio frequency; Silicon; Spirals; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844309

Filename

844309