High-Q X-band and K-band micromachined spiral inductors for use in Si-based integrated circuits

Author

Liang-Hung Lu ; Ponchak, G.E. ; Bhattacharya, P. ; Katehi, L.P.B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2000

fDate

28-28 April 2000

Firstpage

108

Lastpage

112

Abstract

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters are measured to characterize the performance of the inductors. With an etch depth of 20 /spl mu/m, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe-Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

Keywords

MIMIC; MMIC; Q-factor; S-parameters; equivalent circuits; etching; inductors; micromachining; silicon; 2 to 40 GHz; K-band spiral inductors; MMIC applications; Si; Si-based integrated circuits; SiGe-Si; SiGe/Si HBT technology compatibility; X-band spiral inductors; etch depths; high resistivity Si substrate; high-Q spiral inductors; inductor fabrication; micromachined spiral inductors; monolithic microwave ICs; parasitics reduction; quality factor; resonant frequency; two-port S-parameters; Conductivity; Etching; Inductors; Integrated circuit technology; K-band; MMICs; Microwave technology; Q factor; Resonant frequency; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844310

Filename

844310