InP/InGaAs resonant tunneling diode with six-route negative differential resistances

Author

Tsai, Jung-Hui ; Kang, Yu-Chi ; Lour, Wen-Shiung

Author_Institution

Dept. of Phys., Nat. Kaohsiung Normal Univ., Taiwan

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

421

Lastpage

423

Abstract

Sequential tunneling behavior of p-n resonant tunneling diode with four-period InP/InGaAs superlattice is demonstrated. Theoretical calculation shows three split quantized energies in the four-period InP (50 /spl Aring/)/InGaAs (25 /spl Aring/) superlattice structure. For the increase of more negative differential resistance (NDR) routes, high-field domain is formed in the superlattice under sufficiently large operation biases. Experimentally, an interesting six-route NDR characteristic, resulting from the form of split miniband structures and the extension of high-field domain in the InP/InGaAs superlattice, is observed at room temperature.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; negative resistance; p-n heterojunctions; resonant tunnelling diodes; semiconductor superlattices; 25 angstrom; 293 to 298 K; 50 angstrom; InP-InGaAs; high-field domain; miniband structures; operation biases; p-n tunneling diode; quantized energies; resonant tunneling diode; room temperature; sequential tunneling behavior; six-route negative differential resistances; superlattice structure; Diodes; Indium gallium arsenide; Indium phosphide; Logic circuits; Oceans; Physics; RLC circuits; Resonant tunneling devices; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637245