Title :
Advanced manufacturing techniques for next generation power FET Technology
Author :
Clausen, M.C. ; McMonagle, J.
Author_Institution :
Filtronic Compound Semicond., UK
Abstract :
The development and incorporation of an evaporated airbridge technology into an established power pHEMT device is described. Advantages of this technology over a conventional plated technology are discussed. Use of this technology has resulted in improvements to the process flow in terms of reduced complexity and cycle time. Improvements in uniformity and reduced feature size have enabled the use of an automated visual inspection capability to reliably differentiate good and bad die.
Keywords :
power HEMT; semiconductor device manufacture; manufacturing techniques; power FET Technology; power pHEMT device; Bridges; FETs; Gold; Lithography; Manufacturing; Resists; Semiconductor device manufacture; Shape; Solvents; Strips;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
