Analytical compact modeling of nanoscale triple-gate FinFETs

Author

Fasarakis, N. ; Tsormpatzoglou, A. ; Tassis, D.H. ; Pappas, I. ; Papathanasiou, K. ; Dimitriadis, C.A.

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2012

fDate

25-28 March 2012

Firstpage

72

Lastpage

75

Abstract

An analytical compact drain current model for undoped (or lightly doped) short-channel triple-gate (TG) FinFETs is presented, taking into account quantum mechanical and short-channel effects such as threshold voltage shift, drain-induced barrier lowering and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface-roughness scattering, channel-length modulation and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations for channel lengths down to 20 nm.

Keywords

MOSFET; nanoelectronics; quantum theory; semiconductor device models; series (mathematics); surface roughness; surface scattering; analytical compact drain current model; analytical compact modeling; channel-length modulation; device simulations; drain-induced barrier lowering; lightly doped short-channel triple-gate FinFET; nanoscale triple-gate FinFET; output characteristics; quantum mechanical effects; saturation region; saturation velocity; series resistance; short-channel effects; subthreshold slope degradation; surface-roughness scattering; threshold voltage shift; transfer characteristics; undoped short-channel triple-gate FinFET; Analytical models; FinFETs; Logic gates; Mathematical model; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean

Conference_Location

Yasmine Hammamet

ISSN

2158-8473

Print_ISBN

978-1-4673-0782-6

Type

conf

DOI

10.1109/MELCON.2012.6196383

Filename

6196383