Title :
Analytical compact modeling of nanoscale triple-gate FinFETs
Author :
Fasarakis, N. ; Tsormpatzoglou, A. ; Tassis, D.H. ; Pappas, I. ; Papathanasiou, K. ; Dimitriadis, C.A.
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
An analytical compact drain current model for undoped (or lightly doped) short-channel triple-gate (TG) FinFETs is presented, taking into account quantum mechanical and short-channel effects such as threshold voltage shift, drain-induced barrier lowering and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface-roughness scattering, channel-length modulation and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations for channel lengths down to 20 nm.
Keywords :
MOSFET; nanoelectronics; quantum theory; semiconductor device models; series (mathematics); surface roughness; surface scattering; analytical compact drain current model; analytical compact modeling; channel-length modulation; device simulations; drain-induced barrier lowering; lightly doped short-channel triple-gate FinFET; nanoscale triple-gate FinFET; output characteristics; quantum mechanical effects; saturation region; saturation velocity; series resistance; short-channel effects; subthreshold slope degradation; surface-roughness scattering; threshold voltage shift; transfer characteristics; undoped short-channel triple-gate FinFET; Analytical models; FinFETs; Logic gates; Mathematical model; Silicon; Threshold voltage;
Conference_Titel :
Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4673-0782-6
DOI :
10.1109/MELCON.2012.6196383
