BI-RME modeling of passive structures for silicon MMICs: feasibility and results

Author

Arcioni, P. ; Bressan, M. ; Conciauro, G. ; Garcia, A.R.O.

Author_Institution

Dipt. di Elettronica, Pavia Univ., Italy

fYear

2000

fDate

28-28 April 2000

Firstpage

136

Lastpage

141

Abstract

The paper reports a novel full-wave approach to the analysis of boxed planar passive structures for Monolithic Microwave Integrated Circuits (MMICs) on lossy substrates. Based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method, the new approach leads to the direct determination of the mathematical model of a planar circuit, in the form of the pole expansion of the admittance matrix in the frequency domain. Any type of frequency- or time-response can be deduced in negligible times from this model. Some examples demonstrate the efficiency of the method.

Keywords

MMIC; boundary integral equations; electric admittance; elemental semiconductors; frequency response; integrated circuit modelling; matrix algebra; silicon; BI-RME modeling; Si; Si MMICs; admittance matrix; boundary integral-resonant mode expansion method; boxed planar passive structures; frequency-response; full-wave approach; lossy substrates; mathematical model; monolithic microwave ICs; passive structure modelling; planar circuit; pole expansion; time-response; Frequency domain analysis; MMICs; Microwave circuits; Planar waveguides; RLC circuits; Rectangular waveguides; Resonance; Silicon; Utility programs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844317

Filename

844317