Volterra series simulations of RF intermodulation characteristics of SiGe HBT´s

Author

Guofu Niu ; Cressler, John D. ; Webster, C.S. ; Joseph, A.J. ; Harame, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

fYear

2000

fDate

28-28 April 2000

Firstpage

142

Lastpage

146

Abstract

A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT´s is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.

Keywords

Ge-Si alloys; UHF bipolar transistors; Volterra series; capacitance; equivalent circuits; feedback; heterojunction bipolar transistors; intermodulation; microwave bipolar transistors; semiconductor device models; semiconductor materials; CB feedback capacitance; RF intermodulation characteristics; SiGe; SiGe HBT; UHV/CVD SiGe devices; Volterra series simulations; bias current; frequency; load condition; load impedance; nonlinearity; source impedance; tone-spacing; two-tone intermodulation; Circuits; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microelectronics; Nonlinear distortion; Radio frequency; Silicon germanium; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844318

Filename

844318