Performance analysis of pre-oxidation process direct bonding copper substrate

Author

Ning, Honglong ; Hu, Shiben ; Tao, Ruiqiang ; Liu, Xianzhe ; Zeng, Yong ; Zhu, Feng ; Yao, Rihui ; Ma, Jusheng ; Qiu, Wen

Author_Institution

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China

fYear

2015

fDate

11-14 Aug. 2015

Firstpage

1377

Lastpage

1381

Abstract

This paper represented the electrical and heat-resistant performance and uniformity of pre-oxidation process direct bonding copper substrate. Contrasting the difference between the raw alumina substrate and direct bonding copper substrate, there is no obvious change in the dielectric dissipation (tgδ); and a little change in the relative dielectric constant (ε). By the electronic speckle pattern interferometer (ESPI), the changes of pre-oxidation process direct bonding copper substrate were analyzed, there are no obvious defects emerging or extending under 100–300°C thermal shock. It proves pre-oxidation process direct bonding copper substrate can be used in high temperature, high frequency and low resistance bus line application field.

Keywords

Bonding; Ceramics; Copper; Dielectric constant; Heating; Substrates; Surface treatment; dielectric dissipation; direct bonding copper; electronic speckle pattern interferometer; pre-oxidation process; relative dielectric constant;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2015 16th International Conference on

Conference_Location

Changsha, China

Type

conf

DOI

10.1109/ICEPT.2015.7236836

Filename

7236836