Title :
Performance analysis of pre-oxidation process direct bonding copper substrate
Author :
Ning, Honglong ; Hu, Shiben ; Tao, Ruiqiang ; Liu, Xianzhe ; Zeng, Yong ; Zhu, Feng ; Yao, Rihui ; Ma, Jusheng ; Qiu, Wen
Author_Institution :
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China
Abstract :
This paper represented the electrical and heat-resistant performance and uniformity of pre-oxidation process direct bonding copper substrate. Contrasting the difference between the raw alumina substrate and direct bonding copper substrate, there is no obvious change in the dielectric dissipation (tgδ); and a little change in the relative dielectric constant (ε). By the electronic speckle pattern interferometer (ESPI), the changes of pre-oxidation process direct bonding copper substrate were analyzed, there are no obvious defects emerging or extending under 100–300°C thermal shock. It proves pre-oxidation process direct bonding copper substrate can be used in high temperature, high frequency and low resistance bus line application field.
Keywords :
Bonding; Ceramics; Copper; Dielectric constant; Heating; Substrates; Surface treatment; dielectric dissipation; direct bonding copper; electronic speckle pattern interferometer; pre-oxidation process; relative dielectric constant;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha, China
DOI :
10.1109/ICEPT.2015.7236836
