TLM characterization of planar microwave transformers for monolithic power amplifiers

Author

Rebel, J. ; Russer, P.

Author_Institution

Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

147

Lastpage

151

Abstract

The time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method is described in this paper. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. For this a simplified model and a full model of the real transformer are investigated. We found that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Si substrate can be neglected up to 5 GHz.

Keywords

MMIC power amplifiers; UHF power amplifiers; high-frequency transformers; losses; time-domain analysis; transformer windings; transmission line matrix methods; 2 GHz; RF power amplifiers; SCN-TLM method; Si; TLM characterization; conductor losses; electrical properties; lossy Si substrate; model; monolithic power amplifiers; planar microwave transformers; time domain characterization; windings; Aluminum; Circuits; Gas insulated transmission lines; Lithography; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844319

Filename

844319