• DocumentCode
    2024987
  • Title

    Intermittent operating life results for different control strategies

  • Author

    Chen, Yuan ; Hou, Bo

  • Author_Institution
    Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronic Institute of MII, Guangzhou, China
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    1382
  • Lastpage
    1385
  • Abstract
    Intermittent operating life test is an important method to characterize the lifetime and package reliability of power semiconductor devices. The control strategy is a very important feature of the intermittent operating life test. Intermittent operating life tests with identical start condition but different control strategies (temperature control strategy and time control strategy) have been performed, which have been conducted on specially assembled test equipment with ultimate control of all test parameters. The test results under these two different control strategies are analyzed and discussed. Failure analysis is also used, to understand the failure mechanisms induced by intermittent operating life tests. The changes of thermal resistance with intermittent life cycle number are compared under two control strategies. The results show, that time control strategy is more severe than temperature control strategy. The lifetime of power devices is longer under temperature control strategy. And the thermal resistance increases relatively larger by time control strategy
  • Keywords
    Silicon; Stress; Temperature control; Thermal resistance; Intermittent Operating Life; Power Semiconductor Device; Temperature Control Strategy; Time Control Strategy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236837
  • Filename
    7236837