• DocumentCode
    2024998
  • Title

    Ultra high IP3 passive GaAs FET mixers

  • Author

    Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg

  • Author_Institution
    Microwave Eng., Technische Univ. Berlin, Germany
  • fYear
    2005
  • fDate
    3-4 Oct. 2005
  • Firstpage
    457
  • Lastpage
    460
  • Abstract
    This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; mixers (circuits); GaAs; balancing principles; input third-order intercept points; passive FET mixers; port isolation; Ferrites; Gallium arsenide; Linearity; Low pass filters; Microwave FETs; Mixers; PHEMTs; Radio frequency; Topology; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
  • Conference_Location
    Paris
  • Print_ISBN
    88-902012-0-7
  • Type

    conf

  • Filename
    1637254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2024998