Simulation of all-optical demultiplexing utilizing two-photon absorption in semiconductor devices for high-speed OTDM networks

Author

Maguire, P.J. ; Barry, L.P.

Author_Institution

Res. Inst. for Networks & Comm. Eng., Dublin City Univ., Ireland

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

975

Abstract

The performance of a two-photon absorption (TPA) based demultiplexer in an OTDM communication system is modeled. The demultiplexer is evaluated by comparing the electrical BER of the demultiplexed and detected channel to the optical BER of the signal before the demultiplexer. An error-free demultiplexing of a 250 Gbit/s signal (25 × 10 Gbit/s channels) is shown, using a 30:1 control-to-signal peak power ratio, with a TPA device with a bandwidth of 20 GHz should be possible. The device that is fabricated for TPA is a GaAs/AlAs PIN microcavity photodetector grown on a GaAs substrate.

Keywords

aluminium compounds; demultiplexing; demultiplexing equipment; error statistics; gallium arsenide; microcavities; optical fibre networks; p-i-n photodiodes; photodetectors; telecommunication channels; time division multiplexing; two-photon processes; 10 Gbit/s; 20 GHz; 250 Gbit/s; GaAs; GaAs-AlAs; GaAs/AlAs PIN microcavity photodetector; all-optical demultiplexing; control-to-signal peak power ratio; electrical BER; high-speed OTDM networks; optical BER; two-photon absorption; Absorption; Bandwidth; Bit error rate; Demultiplexing; Error correction; Gallium arsenide; High speed optical techniques; Microcavities; Power system modeling; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363572

Filename

1363572