Title :
Temperature dependence of silicon and silicon carbide power devices: An experimental analysis
Author :
Amairi, Mahbouba ; Mtimet, Sameh ; Ben Salah, Tarek ; Morel, Hervé
Author_Institution :
L.S.E., Univ. of Tunis El Manar, Tunis Le Bélvédère, Tunisia
Abstract :
A comparative experimental study between silicon (Si) and silicon carbide (SiC) power devices is presented. This study focuses on experiment results of forward, reverse and transient characteristics. Three different diodes technologies are tested: PiN, schottky and Merged PiN Schottky (MPS) diodes. Silicon carbide power devices are tested at 25°C-200°C range. However, the silicon devices are tested up to 175°C because of the Si temperature limitation. Experimental results show that silicon carbide MPS diode offers superior temperature performance over silicon PiN diodes during transient mode.
Keywords :
Schottky diodes; p-i-n diodes; power semiconductor diodes; silicon compounds; temperature; MPS diode; SiC; diodes technology; merged PiN Schottky diode; silicon carbide power device; temperature 25 C to 200 C; temperature dependence; temperature limitation; transient mode; Leakage current; Schottky diodes; Silicon; Silicon carbide; Temperature; Transient analysis;
Conference_Titel :
Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4673-0782-6
DOI :
10.1109/MELCON.2012.6196389
