Title :
Modeling intermodulation distortion in SiGe HBTs
Author :
Wong, P.K. ; Pejcinovic, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
Abstract :
The accuracy of large-signal equivalent circuit models of silicon-germanium heterojunction bipolar transistors (HBTs) is examined. Nominal transistor model parameters are found to be insufficiently accurate to reliably predict intermodulation distortion (IMD) in individual heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. For best results, some form of parameter optimization for IMD should be considered as a part of the parameter extraction procedure. Differences between transistor models are observed and analyzed by comparing measured IMD power levels with computer simulation results. The Gummel-Poon model is found to be simpler and easier to optimize than the Kull-Nagel model.
Keywords :
Ge-Si alloys; UHF bipolar transistors; equivalent circuits; heterojunction bipolar transistors; intermodulation distortion; microwave bipolar transistors; semiconductor device models; semiconductor materials; Gummel-Poon model; IMD modeling; IMD performance; Kull-Nagel model; SiGe; SiGe HBTs; heterojunction bipolar transistors; intermodulation distortion; large-signal equivalent circuit models; parameter extraction procedure; parameter optimization; transistor model parameters; transistor models; Circuit simulation; Computational modeling; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Intermodulation distortion; Optimization methods; Parameter extraction; Predictive models; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844326
