DocumentCode :
2025221
Title :
Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT
Author :
Lin, Chien-Cheng ; Hsu, Yu-Cheng
Author_Institution :
Comput. & Commun. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
489
Lastpage :
492
Abstract :
A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5 V single supply has been developed for both WLAN 2.4 GHz and 5.2 GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and proper output matching networks. The proposed WLAN PA chip provides low current consumption and high power added efficiency. The WLAN-PA is implemented as a two-stage MMIC with active bias and input pre-matching and inter-stage matching networks integrated. In addition, the PA is a broadband power amplifier with above 20 dB flat gain between the frequency bands of 2.2 GHz to 5.5 GHz.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; wireless LAN; 2.2 to 5.5 GHz; 2.4 GHz; 3.5 V; 5.2 GHz; HBT; IEEE 802.11a standards; IEEE 802.11b standards; IEEE 802.11g standards; InGaP-GaAs; MMIC; RF bias choke circuits; WINs Corp; WLAN; broadband power amplifier; monolithic microwave integrated circuit; output matching networks; power added efficiency; single-chip dual-band power amplifier; Application specific integrated circuits; Dual band; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Radiofrequency amplifiers; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637262
Link To Document :
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