Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards

Author

Cresswell, M.W. ; Allen, R.A. ; Ghoshtagore, R.N. ; Guillaume, N.M.P. ; Shea, P.J. ; Everist, S.C. ; Linholm, L.W.

Author_Institution

Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2000

fDate

2000

Firstpage

3

Lastpage

9

Abstract

This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in [100] Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging.

Keywords

measurement standards; resistors; scanning electron microscopy; silicon-on-insulator; spatial variables measurement; BESOI material; CD standard; critical dimension measurement; cross-bridge resistor; cross-sectional imaging; electrical linewidth test structure; fabrication; scanning electron microscopy; Electric variables measurement; Etching; Fabrication; Image segmentation; Lattices; NIST; Resistors; Scanning electron microscopy; Silicon on insulator technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on

Print_ISBN

0-7803-6275-7

Type

conf

DOI

10.1109/ICMTS.2000.844393

Filename

844393