Title :
A GaAs FET Oscillator Noise Model with a Periodically Driven Noise Source
Author :
Siweris, Heinz J. ; Schiek, Burkhard
Author_Institution :
Siemens Research Laboratories, ZT ZFE FKE 21, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, Federal Republic of Germany
Abstract :
Measurements and numerical simulations of the phase noise of a GaAs FET oscillator are described. It is shown that simulations with a conventional noise model lead to unsatisfactory agreement with the experimental results. A significantly improved accuracy is obtained with an extended oscillator noise model, which includes a periodically driven noise source.
Keywords :
Attenuators; Circuits; FETs; Feedback; Frequency; Gallium arsenide; Numerical simulation; Oscillators; Phase noise; Phase shifters;
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
DOI :
10.1109/EUMA.1986.334271