DocumentCode :
2025292
Title :
A GaAs FET Oscillator Noise Model with a Periodically Driven Noise Source
Author :
Siweris, Heinz J. ; Schiek, Burkhard
Author_Institution :
Siemens Research Laboratories, ZT ZFE FKE 21, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, Federal Republic of Germany
fYear :
1986
fDate :
8-12 Sept. 1986
Firstpage :
681
Lastpage :
686
Abstract :
Measurements and numerical simulations of the phase noise of a GaAs FET oscillator are described. It is shown that simulations with a conventional noise model lead to unsatisfactory agreement with the experimental results. A significantly improved accuracy is obtained with an extended oscillator noise model, which includes a periodically driven noise source.
Keywords :
Attenuators; Circuits; FETs; Feedback; Frequency; Gallium arsenide; Numerical simulation; Oscillators; Phase noise; Phase shifters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
Type :
conf
DOI :
10.1109/EUMA.1986.334271
Filename :
4133754
Link To Document :
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