• DocumentCode
    2025292
  • Title

    A GaAs FET Oscillator Noise Model with a Periodically Driven Noise Source

  • Author

    Siweris, Heinz J. ; Schiek, Burkhard

  • Author_Institution
    Siemens Research Laboratories, ZT ZFE FKE 21, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, Federal Republic of Germany
  • fYear
    1986
  • fDate
    8-12 Sept. 1986
  • Firstpage
    681
  • Lastpage
    686
  • Abstract
    Measurements and numerical simulations of the phase noise of a GaAs FET oscillator are described. It is shown that simulations with a conventional noise model lead to unsatisfactory agreement with the experimental results. A significantly improved accuracy is obtained with an extended oscillator noise model, which includes a periodically driven noise source.
  • Keywords
    Attenuators; Circuits; FETs; Feedback; Frequency; Gallium arsenide; Numerical simulation; Oscillators; Phase noise; Phase shifters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1986. 16th European
  • Conference_Location
    Dublin, Ireland
  • Type

    conf

  • DOI
    10.1109/EUMA.1986.334271
  • Filename
    4133754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2025292