DocumentCode :
2025342
Title :
Electromechanical modelling of high power RF-MEMS switches with ohmic contact
Author :
Tan, S.G. ; McErlean, E.P. ; Hong, J.S. ; Cui, Z. ; Wang, L. ; Greed, R.B. ; Voyce, D.C.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Heriot-Watt Univ., Edinburgh, UK
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
505
Lastpage :
508
Abstract :
This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.
Keywords :
microswitches; microwave switches; electromechanical modelling; high power RF-MEMS switches; ohmic contact; Communication switching; Laboratories; Micromechanical devices; Ohmic contacts; Power engineering computing; Power semiconductor switches; Radiofrequency microelectromechanical systems; Silicon; Space technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637266
Link To Document :
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