DocumentCode :
2025406
Title :
Stress-induced failure modes in high-tuning range RF MEMS varactors
Author :
Chokshi, Trushal ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
517
Lastpage :
520
Abstract :
In this paper we focus on electromechanical modeling of high-tuning range MEMS varactors with a focus on failures caused by residual compressive stress. In particular, we quantitatively evaluate for the first time a high-tuning range parallel-plate MEMS varactor in the presence of residual compressive stress. A 3D model generated in ANSYS agrees very favorably with the measured data and explains non-ideal discontinuities in the varactor´s C-V curve. It is interesting to note that, although the failures considered in this paper are not encountered in RF MEMS switches, they become particularly important in analog MEMS varactors since they directly impact their effective tuning range.
Keywords :
circuit tuning; microswitches; varactors; ANSYS 3D model; electromechanical modeling; high-tuning range RF MEMS varactors; residual compressive stress; stress-induced failure modes; Capacitors; Compressive stress; Dielectrics; Film bulk acoustic resonators; Micromechanical devices; Microswitches; Packaging; Radiofrequency microelectromechanical systems; Switches; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637269
Link To Document :
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