Characterization of sub-micron MOS transistors, modified using a focused ion beam system

A focused ion beam system has been used to demonstrate the modification of the effective electrical width of a MOS transistor. The internal structure of the transistor test structure is modified using two distinct approaches, where the cut axis is either parallel or orthogonal to the source-drain axis. This paper demonstrates the feasibility of modifying transistor characteristics which can be used to evaluate processes and to modify circuit designs.