• DocumentCode
    2025435
  • Title

    Can silicon catch the millimeter wave?

  • Author

    Long, John R.

  • Author_Institution
    Lab. of Electron. Res., Delft Univ. of Technol., Netherlands
  • fYear
    2005
  • fDate
    3-4 Oct. 2005
  • Firstpage
    521
  • Lastpage
    524
  • Abstract
    Transceiver designs implemented in silicon technology are most competitive in design cycle-time and performance versus cost when compared to other technologies. Scaling is driving silicon technology towards gain-bandwidths of 300 GHz, enabling circuits operating deep into mm-wave frequency bands (i.e., well above 30 GHz). However, innovations in on-chip passive design and construction currently being pioneered in mixed-signal silicon technologies may be the real technology enablers at these frequencies. Relevant examples are presented from the author´s own work and the recent literature.
  • Keywords
    elemental semiconductors; millimetre wave integrated circuits; silicon; transceivers; 300 GHz; mixed-signal silicon technologies; mm-wave frequency bands; onchip passive design; silicon technology; transceiver designs; Attenuation; Bandwidth; Integrated circuit interconnections; Integrated circuit technology; Millimeter wave communication; Millimeter wave technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
  • Conference_Location
    Paris
  • Print_ISBN
    88-902012-0-7
  • Type

    conf

  • Filename
    1637270