DocumentCode
2025474
Title
Power QFN device bump ball lift issue study
Author
Zhang, Hanmin ; Hu, M. ; Li, Ting ; Yin, B.G ; He, Q.C ; Ye, D.H
Author_Institution
School of Electronic Information Engineering, Tianjin University, No. 92, Weijin Nan Road, Nankai District, China
fYear
2015
fDate
11-14 Aug. 2015
Firstpage
1452
Lastpage
1455
Abstract
Power QFN device had CSR(Current Sense Ratio-Mirror cell Mosfet current to Main mosfet current Ratio. Mirror cell current is proportional to main mosfet, used for monitor main mosfet current) issue on TC500 or application. Failure analysis verified that it was caused by bump ball lift issue. XPS (X-ray Photoelectron Spectroscopy) Analysis verified the pad contamination caused the bump ball lift issue. After further analysis, the contamination was from solder paste out-gassing during Die bonding process. Finally, the contamination was reduced by die bond oven improvement and forming gas/exhaust parameters optimization and passed all reliability test.
Keywords
Contamination; Integrated circuit reliability; Ovens; Packaging; Spectroscopy; Wires; Bump ball lift; Die bond oven; Forming gas/exhaust; Power QFN;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location
Changsha, China
Type
conf
DOI
10.1109/ICEPT.2015.7236855
Filename
7236855
Link To Document