Title :
A 90 nm DT-MOS transistor for high speed operation
Author :
Hsu, Heng-Ming ; Lee, Tai-Hsing ; Fu, Guan-Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
This paper reports a new Dynamic Threshold Voltage MOS (DT-MOS) transistor using foundry 90-nm CMOS process. Adopting the sub-circuit of the source follower, the proposed device could be operated in the voltage over 0.7 V. Measurement results demonstrate the 33% improvement of current driving capability and 20% improvement of transconductance compared to the reference MOS transistor. Moreover, the achieved high transconductance of the proposed transistor enhances the 30% RF performance.
Keywords :
CMOS integrated circuits; MOSFET; CMOS process; DT-MOS transistor; RF performance; current driving capability; dynamic threshold voltage MOS transistor; high speed operation; size 90 nm; transconductance; CMOS technology; Degradation; Equations; Immune system; MOSFET circuits; Microwave transistors; Power supplies; Radio frequency; Threshold voltage; Transconductance; Dynamic Threshold Voltage MOS transistor (DTMOS); source follower; transmit frequency (ft);
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
