A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation

Author

Ohzone, Takashi ; Yuzaki, Masae ; Matsuda, Toshihiro ; Kameda, Etsumasa

Author_Institution

Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan

fYear

2000

fDate

2000

Firstpage

75

Lastpage

80

Abstract

Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.

Keywords

MOSFET; hot carriers; photoemission; semiconductor device measurement; DC operation; device lifetime; drain current; dynamic operation; hot-carrier-induced photoemission; n-MOSFET; photoemission microscopy; pulse waveform; substrate current; total photon count; two-dimensional profile; CMOSFETs; Degradation; Dynamic voltage scaling; Electric variables measurement; Hot carrier effects; Hot carriers; MOSFET circuits; Microscopy; Photoelectricity; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on

Print_ISBN

0-7803-6275-7

Type

conf

DOI

10.1109/ICMTS.2000.844408

Filename

844408