Title :
A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation
Author :
Ohzone, Takashi ; Yuzaki, Masae ; Matsuda, Toshihiro ; Kameda, Etsumasa
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
Abstract :
Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.
Keywords :
MOSFET; hot carriers; photoemission; semiconductor device measurement; DC operation; device lifetime; drain current; dynamic operation; hot-carrier-induced photoemission; n-MOSFET; photoemission microscopy; pulse waveform; substrate current; total photon count; two-dimensional profile; CMOSFETs; Degradation; Dynamic voltage scaling; Electric variables measurement; Hot carrier effects; Hot carriers; MOSFET circuits; Microscopy; Photoelectricity; Spatial resolution;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844408
