Fully integrated millimeter-wave VCO using slow-wave Thin-Film Microstrip Lines for chip size reduction

Author

Liu, Gang ; Schleicher, Bernd ; Purtova, Tatyana ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

116

Lastpage

119

Abstract

In this paper, the authors present a fully integrated millimeter-wave VCO designed with a low cost, 80 GHz fT SiGe HBT technology. Slow-wave Thin-Film Microstrip Lines (STFMLs) are used as inductors and for matching networks. The VCO oscillates from 35.4 GHz to 39.4 GHz with around 2.5 dBm output power. A phase noise of -92 dBc/Hz at 1 MHz offset was measured for the free running VCO. Varactor adjustment using Focused Ion Beam (FIB) enables the VCO to oscillate from 37.3 GHz to 43.3 GHz, with similar power and phase noise performance.

Keywords

bipolar MIMIC; bipolar integrated circuits; focused ion beam technology; microstrip lines; millimetre wave oscillators; voltage-controlled oscillators; FIB; SiGe HBT technology; chip size reduction; focused ion beam; frequency 80 GHz; fully integrated millimeter-wave VCO; inductors; matching networks; phase noise; slow-wave thin-film microstrip lines; varactor adjustment; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Millimeter wave technology; Phase noise; Power generation; Silicon germanium; Thin film inductors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296473