DocumentCode
2025926
Title
Characterisation of systematic MOSFET transconductance mismatch
Author
Tuinhout, H.
Author_Institution
Philips Res., Eindhoven, Netherlands
fYear
2000
fDate
2000
Firstpage
131
Lastpage
136
Abstract
This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.
Keywords
MOSFET; chemical mechanical polishing; semiconductor device measurement; semiconductor device models; CMP dummy tiles; CS/CG configuration; MOSFET pairs; cumulative probability; current factor mismatch; dimensional offsets; mechanical strain; scribe-lane test structures; statistical estimators; systematic transconductance mismatch; Heart; Large Hadron Collider; MOSFET circuits; Measurement standards; Noise measurement; Noise reduction; Passivation; Testing; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN
0-7803-6275-7
Type
conf
DOI
10.1109/ICMTS.2000.844419
Filename
844419
Link To Document