• DocumentCode
    2026001
  • Title

    Full Noise Characterization of Micromave Devices. Application to GaAlAs/GaAs TEGFET

  • Author

    Chusseau, L. ; Carnez, B. ; Brun, M. Le ; Rumelhard, C.

  • fYear
    1986
  • fDate
    8-12 Sept. 1986
  • Firstpage
    841
  • Lastpage
    846
  • Abstract
    A new method for the full noise characterization of microwave devices is proposed. It takes into account various kinds of measurement uncertainties, and is able to process results from an automatic noise measurement set up. The full noise characterization of a 140¿m gatewidth and 0.5¿m gate length TEGFET in the 2-18 GHz band is given as an exemple.
  • Keywords
    Admittance measurement; Equations; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Microwave theory and techniques; Noise figure; Noise measurement; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1986. 16th European
  • Conference_Location
    Dublin, Ireland
  • Type

    conf

  • DOI
    10.1109/EUMA.1986.334297
  • Filename
    4133780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2026001