Title :
Reliability evaluation method of low temperature poly-silicon TFTs using dynamic stress
Author :
Uraoka, Y. ; Hatayama, T. ; Fuyuki, T.
Author_Institution :
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
Evaluation method of reliability of low temperature poly-Si using dynamic stress is proposed. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and the number of repetition. This degradation is dominated by hot electrons and can be improved by adopting LDD structures.
Keywords :
carrier mobility; elemental semiconductors; hot carriers; semiconductor device reliability; semiconductor device testing; silicon; thin film transistors; LDD structure; ON current; Si; carrier mobility; dynamic stress; hot electron degradation; low temperature growth; polysilicon TFT; reliability testing; Active matrix liquid crystal displays; Circuit testing; Degradation; Materials science and technology; Pulse measurements; Pulsed laser deposition; Stress measurement; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844424
