Low noise subpicosecond pulse generation from a 22 GHz AlInGaAs multiple quantum well laser by direct RF modulation

Author

Sarailou, Edris ; Ardey, Abhijeet ; Delfyett, Peter J.

Author_Institution

Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA

fYear

2012

fDate

11-13 Sept. 2012

Firstpage

68

Lastpage

69

Abstract

Here we present 860 fs pulses from a monolithic AlInGaAs multiple quantum well two-section MLL fabricated by employing a very simple self-aligned wet etching technique. By using Benzocyclobutene (BCB) as the isolation layer and minimizing the metal pad size, we are able to modulate the SA at 22 GHz and synchronize the laser to an external source. By doing so we achieve very effective FHML (280 fs timing jitter) which shows distinct advantages over other methods.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; laser mode locking; laser noise; microwave photonics; optical fabrication; optical modulation; optical pulse generation; quantum well lasers; synchronisation; timing jitter; AlInGaAs; BCB; FHML; benzocyclobutene; direct RF modulation; external source; frequency 22 GHz; isolation layer; laser synchronization; low noise subpicosecond pulse generation; metal pad size; mode-locked laser; monolithic multiple quantum well; multiple quantum well laser; self-aligned wet etching; time 280 fs; time 860 fs; timing jitter; two-section MLL; Laser mode locking; Laser noise; Optical device fabrication; Optical pulses; Photonics; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Avionics, Fiber- Optics and Photonics Technology Conference (AVFOP), 2012 IEEE

Conference_Location

Cocoa Beach, FL

Print_ISBN

978-1-4577-0757-5

Type

conf

DOI

10.1109/AVFOP.2012.6344082

Filename

6344082