Title :
GaAs MMICs for use in upconverter module for Ka-band OBS satellite transponders
Author :
Jeong, Jin-Cheol ; Chang, Dong-pil ; Shin, Dong-hwan ; Yom, In-Bok
Author_Institution :
Global Area Wireless Technol. Group, ETRI, Taejon, South Korea
Abstract :
GaAs MMICs has been developed for use in the upconverter module for on-board switching Ka-band satellite transponders. There are four kinds of MMICs: an S-band medium power amplifier, a K-band medium power amplifier, an S to K-band mixer, and X to Ku-band frequency doubler. The four chips have been fabricated on a wafer using 0.15 /spl mu/m GaAs p-HEMT technologies. A upconverter module using the MMICs with a function of the frequency conversion from 3 GHz to 20 GHz has been developed and showed the RF performance of the 17.1/spl plusmn/0.2 dB conversion gain, the 0.2 nsp-p group delay, the 46.67 dBc C/IM/sub 3/, and 1.15:1 in/out VSWR.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; MMIC mixers; MMIC power amplifiers; gallium arsenide; satellite links; transponders; 0.15 mum; 3 to 20 GHz; GaAs; K-band medium power amplifier; K-band mixer; Ka-band OBS satellite transponders; Ku-band frequency doubler; MMIC; S-band medium power amplifier; S-band mixer; X-band frequency doubler; frequency conversion; on-board switching transponders; p-HEMT technologies; upconverter module; Frequency conversion; Gain; Gallium arsenide; K-band; MMICs; Mixers; Power amplifiers; Radio frequency; Satellites; Transponders;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
