DocumentCode :
2026177
Title :
Wideband monolithic microwave integrated circuit frequency converters with GaAs mHEMT technology
Author :
Krozer, Viktor ; Johansen, Tom K. ; Djurhuus, Torsten ; Vidjaer, J.
Author_Institution :
Dept. of Electromagn. Syst., Tech. Univ. Denmark, Lyngby, Denmark
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
637
Lastpage :
640
Abstract :
We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is /spl sim/ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; baluns; gallium arsenide; semiconductor device models; 20 GHz; 3 dB; GaAs; Gilbert mixer cell core; MMIC frequency converters; amplitude linearity; baluns; mHEMT technology; phase linearity; wideband monolithic microwave integrated circuit; Frequency conversion; Gallium arsenide; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Radio frequency; Wideband; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637300
Link To Document :
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