Title :
A 0.18-/spl mu/m 2.4-6 GHz CMOS broadband differential LNA For WLAN and UWB receiver
Author :
Chang, C.-P. ; Yen, C.-C. ; Chuang, H.-R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 /spl mu/m 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5 dB, input/output return loss better than 10 dB, and input P/sub 1dB/ of -17 dBm, respectively. In the band from 2.4 to 3 GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-I8 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; low noise amplifiers; radio receivers; ultra wideband communication; wideband amplifiers; wireless LAN; 1.8 V; 17.5 to 18.2 dB; 2.4 to 6 GHz; 3.4 to 5 dB; CMOS broadband differential LNA; UWB receiver; WLAN; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Circuit noise; Circuit topology; Gain; Multiaccess communication; Noise figure; Wireless LAN;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7