• DocumentCode
    2026370
  • Title

    Efficiency improvement in Doherty power amplifier by using Class F approach

  • Author

    Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco ; Piazzon, Luca

  • Author_Institution
    Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a Class F configuration for the Main device, is presented. Theoretical support will be given to understand why and how some relevant DPA´s design parameters have to be carefully selected when a Class F strategy is adopted. Moreover, a comparison between the output performance obtained from a simple tuned load DPA and the here presented Class F DPA will be given. From the experimental results, the realised Class F DPA achieved, in an output back-off of 6 dB, an average drain efficiency of 50% with a saturated output power of 3.2 W at 2.14 GHz.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; AB-C Doherty power amplifier; Class F approach; GaN; drain efficiency; output back-off; saturated output power; tuned load DPA; Design engineering; Gallium nitride; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Peak to average power ratio; Power amplifiers; Power engineering and energy; Power generation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4749-7
  • Type

    conf

  • Filename
    5296496