DocumentCode
2026387
Title
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Limiti, E. ; Serino, A. ; Peroni, M. ; Romanini, P. ; Proietti, C.
Author_Institution
Dept. of Electron. Eng., Rome Univ., Italy
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
673
Lastpage
676
Abstract
In this contribution a C-band 2nd harmonic tuned hybrid power amplifier utilizing a PHEMT GaN device is presented, together with technological aspects, non linear device model and adopted design criteria. The amplifier has been realised in hybrid form, exhibiting a bandwidth larger than 20% around 5.5 GHz, with a minimum output power of 33 dBm, and a drain efficiency of 60% at the centre frequency.
Keywords
III-V semiconductors; circuit tuning; gallium compounds; high electron mobility transistors; microwave amplifiers; power harmonic filters; wide band gap semiconductors; 5.5 GHz; C-band second harmonic tuned hybrid power amplifier; GaN; PHEMT device; nonlinear device model; Breakdown voltage; Gallium nitride; Gold; HEMTs; High power amplifiers; Power amplifiers; Power generation; Power system harmonics; Silicon carbide; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637309
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