DocumentCode
2026389
Title
Fowler Nordheim induced light emission from MOS diodes
Author
Bellutti, P. ; Betta, G. F Dalla ; Zorzi, N. ; Versari, R. ; Pieracci, Augusto ; Riccò, B. ; Manfredi, M. ; Soncini, G.
Author_Institution
Div. Microsistemi, ITC-IRST, Italy
fYear
2000
fDate
2000
Firstpage
223
Lastpage
226
Abstract
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of the poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.
Keywords
MIS devices; light emitting diodes; luminescence; semiconductor device measurement; tunnel diodes; Fowler Nordheim induced light emission; MOS tunnel diodes; MOSLED; Si; Si substrate; SiO2-Si; hot carrier radiation model; photon energy distribution; poly-Si layer; polysilicon layer; test structures; Anodes; Artificial intelligence; Cathodes; Computer aided instruction; Diodes; Electrons; Photonic integrated circuits; Strips; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN
0-7803-6275-7
Type
conf
DOI
10.1109/ICMTS.2000.844435
Filename
844435
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