A new extraction method of high frequency noise parameters in the temperature range -55/150 deg. for SiGe HBT in BiCMOS process

Author

Gloria, D. ; Gellida, S. ; Morin, C.

Author_Institution

ST Microelectron., Crolles, France

fYear

2000

fDate

2000

Firstpage

229

Lastpage

234

Abstract

High Frequency (HF) test structures for SiGe HBT and a parameter extraction methodology are described to obtain HF merit figures (Ft, Fmax, minimum noise figure NFmin, optimum source reflection coefficient GammaOPT, and noise equivalent resistance RN) in the temperature range -55/150 deg. The frequency range is 45 MHz-110 GHz for S parameters and 800 MHz-4 GHz for noise ones. Thanks to low substrate losses in these structures, a new fast de-embedding method for HF noise measurement is presented. Experimental data show an increase of base resistance, NFmin, GammaOPT, Rn and a decrease of Ft, Fmax with increasing temperatures because of the electron mobility evolution.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; UHF integrated circuits; UHF measurement; electric noise measurement; electron mobility; equivalent circuits; heterojunction bipolar transistors; integrated circuit measurement; integrated circuit noise; integrated circuit testing; microwave measurement; millimetre wave measurement; semiconductor device models; semiconductor device noise; semiconductor materials; -55 to 150 C; 45 MHz to 110 GHz; BiCMOS process; GammaOPT; HF merit figures; HF noise measurement; S-parameters; SiGe; SiGe HBT; base resistance; electron mobility evolution; fast de-embedding method; high frequency noise parameters; minimum noise figure; noise equivalent resistance; optimum source reflection coefficient; parameter extraction method; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Noise figure; Parameter extraction; Silicon germanium; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on

Print_ISBN

0-7803-6275-7

Type

conf

DOI

10.1109/ICMTS.2000.844436

Filename

844436